STUDI PENGARUH PLASMA ETCHING GAS CH2FCF3 PADA PERMUKAAN SiO2 TERHADAP PERUBAHAN KEKASARAN PERMUKAAN SiO2
Antonius Prisma Jalu Permana1
1Jurusan Teknik Mesin – Fakultas Teknik –
Universitas Katolik Widya Karya Malang
email : [email protected]
Abstract
Effect of gas flow rate on the surface of quartz crystal SiO2 during plasma etching was studied. The etching process was applied using the capacitively coupled plasma (CCP) reactor generated with 100 W power AC generator at low frequency of 40 kHz using a gas flow of CH2FCF3. The main objective of this study was to determine the effect of changing gas flow rate on the plasma etching rate on the SiO2 surfaces. Gas flow rate was varied between 20-40 mL/min, while keeping all other plasma parameters constant. The etched surface of SiO2 was analyzed using white-light profilometer (Topography Measurement System (TMS 1200 Micro Lab)). The results showed the used of higher flow gas made higher decreased of surface roughness.
Keywords: etching, flow rate, plasma
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